Technology Development Project Leader

up to 116k base

Oregon

Semiconductors and Engineering - Industrial / Manufacturing

Benefits - Full
Relocation Assistance Available - Yes
Bonus Eligible - Yes
Interview Travel Reimbursed - Yes

Description
-Lead 180 nm development of government funded program.
-Device development of photo diodes in silicon.
-Integration on SOI and bulk substrates.
-Layer definition and design kit development.
-> 10 years experience in semiconductor fabrication with at least 5 years in
development.
-Candidate needs to have an understanding of foundry compatible 180 nm
technologies.  Foundry experience a plus.
-Experience in developing deep submicron ASIC technologies on SOI.
-Understanding of CMOS active device requirements and constraints when
integrated on SOI.
-Understanding of analog CMOS and photo diodes. Understanding of analog
circuits a and various configurations/layouts of photo (PiN) diodes a plus.
-Experience in device level intrinsic reliability and qualification of CMOS
devices on SOI.
-Candidate needs to be able to work between external customer, business
group and Operations building a cooperative and productive environment.
Ownership initiative. Ability to aggressively start and complete a project.
Ability to direct work groups as the technical lead. Ability to resolve
problems quickly.
-Must be a US citizen or a permanent resident.

10+ to 15 years of experience
Minimum Education - Bachelor's Degree
Willingness to Travel - Occasionally

Skills and Certifications  (required)
Experience in developing deep submicron ASIC tech.
Understanding of CMOS active device requirements a

-Must be a US citizen or a permanent resident, visa candidates will not be
considered.