SRAM Device Technologist-

California & Texas, up to 125k base

We are looking for technology candidates with experience in SILICONE..if you
could target these folks at UMC- TSMC- INTEL- Qualcomm and Broadcomm....
Semiconductors and Engineering - Engineering Design

Benefits - Full
Relocation Assistance Available - Yes
Bonus Eligible - Yes
Interview Travel Reimbursed - Yes

A SRAM Device engineer will be responsible for working on high density SRAM
memory in CMOS logic process technologies including 20nm high-k/MG and
beyond. In this position, you will both develop and integrate high density
SRAM devices into the current Logic process flows, optimized for
performance, reliability, device mismatch, yield and ease of manufacturing.

You will be responsible for all aspects of the SRAM module development. This
includes the structural development of SRAM bit cells, SRAM device
development, integration into baseline processes, characterization of the
cells, and analysis of parametric data bridging into yield engineering
activity.

This position involves activities associated with the development and
transfer to manufacturing of both high-performance and low-power CMOS
technologies. Basic device concepts are received from Research and are
tested and integrated into full technology solutions to satisfy the needs of
our foundry customers, working closely with internal manufacturing
facilities.

The role requires interaction with
-Device modeling group and process-integration groups to determine adequate
electrical and layout design rules. Based on technology definition to meet
customer requirements, with the help of the modeling group, you will define
electrical & process parametric targets for SRAM device spice models.
- Test and Characterization group to analyze and debug device related issues
during process development. Your work will involve the use of JMP, and other
software that enables statistical analysis of large parametric and
reliability data sets.
-Layout and parametric groups to design and layout test structures (macros),
working on setting up parametric programs. You will interface with process
engineers (or Integration Engineers) to define and analyze appropriate
process/device DOE (Design of Experiment). You will also routinely work
directly with engineers in process Integration, starting with reliability
issues ultimately leading to new process qualifications and improved
reliability.

Successful candidates for this position will have: A minimum of 5-7 years of
experience in semiconductor device engineering after Master and/or Ph.D
study and SRAM process integration knowledge and device module development
experience
, or related experience with a similar skill set. A thorough
knowledge of SRAM functional operation, CMOS device physics,
state-of-the-art CMOS logic process technologies, and logic process
integration is preferred.  Ability to aggressively execute complex
process/device experiments and focus on solving problems individually or as
part of a team is desirable. Experience with scribe test structure layout(
testing macros), parametric program setup, and bench measurements and
familiarity of electrical characterization is a plus.

Specific Responsibilities:
- Successful candidates will design, execute, and analyze experiments aimed
at the creation and optimization of leading-edge silicon transistor
technology (20nm technology generation and beyond) within a development
environment. This will include both physical and electrical data analysis,
as well as extensive coordination with the joint technology development
alliance integration, device, and unit process module groups.
-SRAM cell device design and performance optimization across different cells
-Mismatch(Avt) improvement plan and execution to meet technology Vmin
requirement for low leakage and performance SRAM cell families at a given
technology
-Seamless interface role between unit process module, integration and logic
device team in terms of SRAM device maturity learning during technology
development
-Standby leakage management skills by specific device leakage control
engineering by taking all aspects with trade-offs into account
-Silicon HW learning planning and execution as well as electrical data
analysis
-SRAM device targeting to meet technology requirement and working closely
with modeling groups to ensure high quality spice model development
- In addition to the achievement industry-leading device characteristics,
variability (mismatch) and reliability must be monitored and controlled to
ensure manufacturability.
- Interaction with customer design groups will also be a facet of this
position in order to define technology requirements and parametric goals for
GF's technology roadmaps.
- Strong fundamental understanding of solid state device physics,
sub-0.1-micron FET architectures, and the implications of device
characteristics and performance on technology and product behavior.
- Fundamental understanding of unit process and module interactions
(including all FEoL unit processes, such as shallow trench formation, fill
and CMP, gate dielectric and electrode formation, implant and implant
masking and activation, and gate spacer and silicide contact formation) on
electrical parametric, product yield, and performance behavior.
- In addition to technical proficiency, all candidates must have proven
project management skills, peer leadership skills, and be able to mentor
more junior engineers.
- Direct experience in low-leakage / low-power device design and
optimization is strongly desired, and additional technical experience in
FEOL reliability, defect inspection and reduction, yield analysis, and/or
test structure design is a plus.

5+ to 7 years of experience
Minimum Education - Master's Degree
Willingness to Travel Occasionally

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